fea tures wide receiving angle variety of sensitivity ranges side-looking package for space limited applications base-emitter resistor provides ambient light protection de scrip tion the op750 series devices consist of an npn silicon phototransistor molded in a clear epoxy package. the wide receiving angle provides relatively even reception over a large area. the side- looking package is designed for easy pc board mounting of slotted optical switches or optical interrupt detectors. this series is mechanically and spectrally matched to the op140 and op240 series of infrared emitting diodes. the phototransistor has an internal base-emitter resistor which provides protection from low level ambient lighting conditions. this feature is also useful when the media being detected is semi-transparent to infrared light in interruptive applications. ab so lute maxi mum rat ings (t a = 25 o c un less oth er wise noted) collector- emitter volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 v emit ter re verse current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 ma col lec tor dc cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 ma stor age and op er at ing tem pera ture range . . . . . . . . . . . . . . . . . . -40 o c to +100 o c lead sol der ing tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 o c (1) power dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mw (2) notes: (1) rma flux is recommended. duration can be extended to 10 sec. max. when flow soldering. max. 20 grams force may be applied to leads when soldering. (2) derate linearly 1.33 mw/ o c above 25 o c. (3) light source is an unfiltered gaas led with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) the knee point irradiance is defined as the irradiance required to increase i c(on) to 50 m a. typi cal per form ance curves prod uct bul le tin op750 june 1999 npn pho to tran sis tor with base- emitter resistor types OP750A, op750b, op750c, op750d op tek tech nol ogy, inc. 1215 w. crosby road car roll ton, texas 75006 (97 2) 323- 2200 fax (972) 323- 2396 typi cal spec tral re sponse wave length - nm 7 sche matic
types OP750A, op750b, op750c, op750d elec tri cal char ac ter is tics (t a = 25 o c un less oth er wise noted) sym bol pa rame ter min typ max units test con di tions i c(on) on-state collector current OP750A op750b op750c op750d 2.25 1.50 0.85 0.85 7.00 4.20 2.80 7.00 ma v ce = 5 v, e e = 1 mw/cm 2(3) e kp knee point irradiance .03 mw/cm 2 v ce = 5 v (4) i ceo collector-emitter dark current 100 na v ce = 10 v, e e = 0 i eco emitter-reverse current 100 m a v ec = 0.4 v v (br)ceo collector-emitter breakdown voltage 30 v i c = 100 m a v ce(sat) collector-emitter saturation voltage 0.4 v i c = 100 m a, e e = 1 mw/cm 2(3) typi cal per form ance curves optek reserves the right to make changes at any time in order to improve design and to supply the b est product possible. op tek tech nol ogy, inc. 1215 w. crosby road car roll ton, texas 75006 (97 2) 323- 2200 fax (972) 323- 2396 normalized collector current vs. angular displacement q - angluar displacement - deg. normalized light and dark current vs. ambient temperature e e - irradiance - mw/cm 2 on-state collector current vs. irradiance normalized output vs. frequency op550 op750 v ce = 5 v led: l = 935 nm r l = 1k w r l = 10k w r l - load resistance - k w typical rise and fall time vs. load resistance v cc = 5 v v rl = 1 v f = 100 hz pw = 1ms test conditions: light source is pulsed led with t r and t f 500 ns. i f is adjusted for v out = 1 volt. switching time test circuit 120 105 90 75 60 45 30 15 0 t a - ambient temperature - c 100 10 1 .1 .01 .001 .0001 1 .1 10 .01 .00001 .001 1000 100 10 0.0 1 0.5 1.0 light current dark current frequency - khz v r = 1 v v ce = 5 v 50% duty cycle led: l = 935 nm 0 2 4 6 8 10 8 led = gaaias, l = 890 nm v rl is voltage across r l
|
